Publications

  • B. Huber-Rodriguez, Siu Yi Kwang, W. J. Hardy, H. Ji, C.-W. Chen, E. Morosan, and D. Natelson, "Thermal Barkhausen effect at the metal-insulator transition in vanadium dioxide", submitted.

  • J. Lin, H. Ji, M. W. Swift, W. J. Hardy, Z. Peng, X. Fan, A. H. Nevidomskyy, J. M. Tour, and D. Natelson, "Hydrogen diffusion and stabilization in single-crystal VO2 micron/nanobeams by direct atomic hydrogenation", Nano Lett., in press (2014).

  • W. J. Hardy, C.-W. Chen, A. Marcinkova, J. Sinova, D. Natelson, and E. Morosan, "Very large magnetoresistance in Fe0.28TaS2 single crystals", submitted.

  • W. J. Hardy, H. Ji, E. Mikheev, S. Stemmer, and D. Natelson, "Nanostructure investigations of nonlinear differential conductance in NdNiO3 thin films", submitted.

  • R. Chen, M. Matt, F. Pauly, P. Nielaba, J. C. Cuevas, and D. Natelson, "Shot noise variation within ensembles of gold atomic break junctions at room temperature", J. Phys.: Condens. Matt., in press (2014). Special issue on break junctions.

  • D. Natelson, "Big lessons about small things", Nature Nano. 9, 488 (2014).

  • Y. Filinchuk, N. A. Tumanov, V. Ban, H. Ji, J. Wei, M. W. Swift, A. H. Nevidomskyy, and D. Natelson,"In situ diffraction study of catalytic hydrogenation of VO2: Stable phases and origins of metallicity", J. Amer. Chem. Soc. 136, 8100-8109 (2014).

  • R. Chen, P. J. Wheeler, M. Di Ventra, and D. Natelson, "Enhanced noise at high bias in atomic-scale Au break junctions", Sci. Rep. 4, 4221 (2014).

  • Y. Li, P. Doak, J. B. Neaton, L. Kronik, and D. Natelson, "Voltage tuning of vibrational mode energies in single-molecule junctions", Proc. Nat. Acad. Sci. US 111, 1282-1287 (2014).

  • J. B. Herzog, M. W. Knight, and D. Natelson, "Thermoplasmonics: Plasmonic heating in single nanowires", Nano Lett. 14, 499-503 (2014).

  • R. S. Arvidson, C. Fischer, D. S. Sawyer, G. D. Scott, D. Natelson, and A. Luttge, "Lateral resolution enhancement of vertical scanning interferometry by sub-pixel sampling", Microsc. Microanal. 20, 90-98 (2014).

  • G. Wang, A. C. Lauchner, J. Lin, D. Natelson, K. V. Palem, and J. M. Tour, "High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array", Adv. Mater. 25 4789-4793 (2013).

  • D. Natelson, "Condensed matter physics: A solid triple point", Nature 500, 408-409 (2013).

  • J. Lin, Z. W. Peng, C. S. Xiang, G. D. Ruan, Z. Yan, D. Natelson, and J. M. Tour, "Graphene nanoribbon and nanostructured SnO2 composite anodes for lithium ion batteries", ACS Nano 7, 6001-6006 (2013).

  • G. D. Scott, D. Natelson, S. Kirchner, and E. Munoz, "Transport characterization of Kondo-correlated single-molecule devices", Phys. Rev. B 87, 241104 (2013).

  • P. J. Wheeler, Ruoyu Chen, and D. Natelson, "Noise in electromigrated nanojunctions", Phys. Rev. B 87, 155411 (2013).

  • J. B. Herzog, M. W. Knight, Y. Li, K. M. Evans, N. J. Halas, and D. Natelson, "Dark plasmons in hot spot generation and polarization in interelectrode nanoscale junctions", Nano Lett. 13, 1359-1364 (2013).

  • D. Natelson, Y. Li, and J. B. Herzog, "Nanogap structures: combining enhanced Raman spectroscopy and electronic transport", Phys. Chem. Chem. Phys. 15, 5262-5275 (2013). For a special themed issue on plasmonics.

  • J. Lin, C. Zhang, Z. Yan, Y. Zhu, Z. Peng, R. H. Hauge, D. Natelson, and J. M. Tour, "3-Dimensional graphene carbon nanotube carpet-based microsupercapacitors with high electrochemical performance", Nano Lett. 13, 72-78 (2013).

  • J. Yao, J. Lin, Y. Dai, G. Ruan, Z. Yan, L. Li, L. Zhong, D. Natelson, and J. M. Tour, "Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene", Nature Comms. 3, 1101 (2012).

  • E. Morosan, D. Natelson, A. H. Nevidomskyy, and Q. M. Si, "Strongly Correlated Materials", Adv. Mater. 24, 4896-4923 (2012). Invited contribution for special centennial issue on materials research at Rice University.

  • N. J. Halas, S. Lal, S. Link, W.-S. Chung, D. Natelson, J. H. Hafner, and P. Nordlander, "A plethora of plasmonics from the Laboratory for Nanophotonics at Rice University", Adv. Mater. 24, 4842-4877 (2012). Invited contribution for special centennial issue on materials research at Rice University.

  • R. Chen, P. J. Wheeler, and D. Natelson, "Excess noise in STM-style break junctions at room temperature", Phys. Rev. B 85, 235455 (2012).

  • H. Ji, J. Wei, and D. Natelson, "Modulation of the electrical properties of VO2 nanobeams using an ionic liquid as a gating medium", Nano Lett. 12, 2988-2992 (2012).

  • J. Wei, H. Ji, W. Guo, A. Nevidomskyy, and D. Natelson, "Hydrogen stabilization of metallic VO2 in single-crystal nanobeams", Nature Nano. 7, 357-362 (2012).

  • D. Natelson, "Mechanical break junctions: Enormous information in a nanoscale package", ACS Nano 6, 2871-2876 (2012).

  • J. Yao, L. Zhong, D. Natelson, and J. M. Tour, "In situ imaging of the conducting filament in a silicon oxide resistive switch", Nature Scientific Reports 2, 242 (2012).

  • J. H. Worne, H. Gullapalli, C. Galande, P. M. Ajayan, and D. Natelson, "Local charge transfer doping in suspended graphene nanojunctions", Appl. Phys. Lett. 100, 023306 (2012).

  • A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Statistical distribution of the electric field driven switching of the Verwey state in Fe3O4", New Journal of Physics 14, 013019 (2012).

  • D. Natelson and M. Di Ventra, "Ion motion and electrochemistry in nanostructures", MRS Bulletin 36(11), 914-920 (2011).

  • D. Natelson, D. R. Ward, F. Hueser, F. Pauly, J. C. Cuevas, D. A. Corley, and J. M. Tour, "Plasmons in nanoscale metal junctions: optical rectification and thermometry", Proceedings of the SPIE (Optics+Photonics 2011) 8096, 80961O (2011).

  • J. Wei and D. Natelson, "Nanostructure studies of strongly correlated materials", Nanoscale 3, 3509-3521 (2011). (available as pdf here).

  • A. Garcia-Martin, D. R. Ward, D. Natelson, and J. C. Cuevas, "Field enhancement in subnanometer metallic gaps", Phys. Rev. B 83, 193404 (2011).

  • J. Yao, L. Zhong, D. Natelson, and J. M. Tour, "Intrinsic resistive switching and memory effects in silicon oxide", Appl. Phys. A 102, 835-839 (2011).

  • J. Yao, L. Zhong, D. Natelson, and J. M. Tour, "Silicon oxide is a non-innocent surface for molecular electronics and nanoelectronics studies", J. Am. Chem. Soc. 133, 941-948 (2011).

  • A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Interfacial transport properties between a strongly correlated transition metal oxide and a metal: Contact resistance in Fe3O4/M (M=Cu, Au, Pt) nanostructures", Phys. Rev. B. 82, 245112 (2010).

  • D. R. Ward, D. A. Corley, J. M. Tour, and D. Natelson, "Vibrational and electronic heating in nanoscale junctions", Nature Nano. 6, 33-38 (2011).

  • D. R. Ward, F. Hueser, F. Pauly, J. C. Cuevas, and D. Natelson, "Optical rectification and field enhancement in a plasmonic nanogap", Nature Nano. 5, 732-736 (2010).

  • J. Yao, Z. Sun, L. Zhong, D. Natelson, and J. M. Tour, "Resistive switches and memories from silicon oxide", Nano Lett. 10, 4105-4110 (2010).

  • D. Natelson, "Carrier Characteristics", Nature Materials 9, 703-704 (2010).

  • J. H. Worne, J. E. Anthony, and D. Natelson, "Transport in organic semiconductors in large electric fields: From thermal activation to field emission", Appl. Phys. Lett. 96, 053308 (2010).

  • P. J. Wheeler, J. N. Russom, K. Evans, N. S. King, and D. Natelson, "Shot noise suppression at room temperature in atomic-scale Au contacts", Nano Lett. 10, 1287-1292 (2010).

  • A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Interplay of bulk and interface effects in the electric field driven transition in magnetite", Phys. Rev. B 81, 045123 (2010).

  • G. D. Scott, J. J. Palacios, and D. Natelson, "Anomalous transport and possible phase transition in Pd nanojunctions", ACS Nano 4, 2831-2837 (2010).

  • G. D. Scott and D. Natelson, "Kondo resonances in molecular devices", ACS Nano 4, 3560-3579 (2010).

  • A. Sinitskii, A. A. Fursina, D. Kosynkin, A. Higginbotham, D. Natelson, and J. M. Tour, "Electronic transport in monolayer graphene nanoribbons produced by chemical unzipping of carbon nanotubes", Appl. Phys. Lett. 95, 253108 (2009).

  • J. Yao, J. Zhong, L. Zhong, D. Natelson, and J. M. Tour, "Two-terminal nonvolatile memories based on single-walled carbon nanotubes", ACS Nano 3, 4122-4126 (2009).

  • J. Yao, L. Zhong, Z. Zhang, T. He, Z. Jin, P. J. Wheeler, D. Natelson, and J. M. Tour, "Resistive switching in nanogap systems on SiO2 substrates", Small 5, 2910-2915 (2009).

  • D. Natelson, "Correlated electron systems: better than average", Nature Nano. 4, 406-407 (2009).

  • D. Natelson, "Towards the ultimate transistor", Physics World 22, 27-31 (2009). Also re-published in abridged form in Compound Semiconductor magazine.

  • A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson "The origin of hysteresis in resistive switching in magnetite is Joule heating", Phys. Rev. B 79, 245131 (2009)

  • G. D. Scott, Z. K. Keane, J. W. Ciszek, J. M. Tour, and D. Natelson. "Universal scaling of nonequilibrium transport in the Kondo regime of single molecule devices", Phys. Rev. B 79, 165413 (2009)

  • M. R. Calvo, J. Fernandez-Rossier, J. J. Palacios, D. Jacob, D. Natelson, and C. Untiedt. "The Kondo Effect in ferromagnetic atomic contacts", Nature 458, 1150-1153 (2009).

  • J. Yao, L. Zhong, D. Natelson, and J. M. Tour. "Etching-dependent reproducible memory switching in vertical SiO2 structures", Appl. Phys. Lett. 93, 253101 (2008).

  • D. R. Ward, N. J. Halas, and D. Natelson. "Localized heating in nanoscale Pt constrictions measured using blackbody radiation emission", Appl. Phys. Lett. 93, 213108 (2008).

  • J. H. Worne, R. Giridharagopal, K. F. Kelly, and D. Natelson. "Interfacial charge transfer in nanoscale polymer transistors", Nano Research 1, 341-350 (2008).

  • D. Natelson, L. H. Yu, Z. K. Keane, J. W. Ciszek, and J. M. Tour, "Anomalous gate dependence of the Kondo effect in single-molecule transistors", Physica B, 403 1526-1528 (2008). (Proceedings of SCES 2007).

  • D. R. Ward, G. D. Scott, Z. K. Keane, N. J. Halas, and D. Natelson, "Electronic and optical properties of electromigrated molecular junctions", J. Phys: Condens. Matter 20, 374118 (2008). (Invited, Special issue: Conductivity of single molecules and supramolecular architectures.)

  • A. Fursina, S. Lee, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Nanogaps with very large aspect ratios for electrical measurements", Appl. Phys. Lett. 92, 113102 (2008).

  • D. R. Ward, N. J. Halas, J. W. Ciszek, J. M. Tour, Y. Wu, P. Nordlander, and D. Natelson, "Simultaneous measurements of electronic conduction and Raman response in molecular junctions", Nano Lett. 8, 919-924 (2008).

  • S. Lee, A. Fursina, J. T. Mayo, C. T. Yavuz, V. L. Colvin, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Electrically-driven phase transition in magnetite nanostructures", Nature Materials, 7, 130-133 (2008)

  • D.R. Ward, N.K. Grady, C.S. Levin, N.J. Halas, Y. Wu, P. Nordlander, and D. Natelson, "Electromigrated nanoscale gaps for surface-enhanced Raman spectroscopy ", Nano Lett. 7, 1396-1400 (2007).

  • A. Trionfi, S. Lee, and D. Natelson, "Time-dependent universal conductance fluctuations in mesoscopic Au wires: implications", Phys. Rev. B 75, 104202 (2007).

  • S. Lee, A. Trionfi, T. Schallenberg, H. Munekata, and D. Natelson, "Quantum coherence in ferromagnetic semiconductors: time-dependent universal conductance fluctuations and magnetofingerprint", Appl. Phys. Lett. 90, 032105 (2007).

  • A. Trionfi, S. Lee, and D. Natelson, "Strong magnetic scattering from TiOx adhesion layers" , Appl. Phys. Lett. 89, 262104 (2006).

  • C.T. Yavuz, J.T. Mayo, W.W. Wu, A. Prakash, J.C. Falkner, S. Yean, L. Cong, H.J. Shipley, A. Kan, M. Tomson, D. Natelson, and V.L. Colvin, "Low-field magnetic separation of monodisperse Fe3O4 nanocrystals", Science 314, 964-967 (2006).

  • D. Natelson, "Nanofabrication: best of both worlds", Nature Materials 5, 853-854 (2006).

  • D. Natelson, B.H. Hamadani, J.W. Ciszek, D.A. Corley, and J.M. Tour,"Contact effects in polymer field-effect transistors", also cond-mat/0607744, Proceedings of the SPIE 6336, 63360M (2006).

  • C.H. Ahn, A. Bhattacharya, M. Di Ventra, J.N. Eckstein, C. Daniel Frisbie, M.E. Gershenson, A.M. Goldman, I.H. Inoue, J. Mannhart, A.J. Millis, A.F. Morpurgo, D. Natelson, and J.-M. Triscone, "Electrostatic modification of novel materials", Rev. Mod. Phys. 78, 1185-1212 (2006)

  • Z.K. Keane, J.W. Ciszek, J.M. Tour, and D. Natelson, "Three-terminal devices to examine single molecule conductance switching", Nano Lett., 6, 1518-1521 (2006).

  • B.H. Hamadani, D.A. Corley, J.W. Ciszek, J.M. Tour, and D. Natelson, "Controlling charge injection in organic field-effect transistors using self-assembled monolayers", Nano Lett., 6, 1303-1306 (2006).

  • J.W. Ciszek, Z.K. Keane, L. Cheng, M.P. Stewart, L.H. Yu, D. Natelson, and J.M. Tour, "Neutral complexes of first row transition metals bearing unbound thiocyanates and their assembly on metallic surfaces", J. Am. Chem. Soc., 128, 3179-3189 (2006).

  • Z.K. Keane and D. Natelson, "Magnetoresistance of atomic-scale electromigrated nickel nanocontacts", Appl. Phys. Lett. 88, 062514 (2006).

  • D. Natelson, "Single-molecule transistors", a review chapter in the Handbook of Organic Electronics and Photonics, H.S. Nalwa, ed., American Scientific Publishers, pp. 1-49 (2007). Contact Prof. Natelson if you would like a copy.

  • B.H. Hamadani, H. Ding, Y. Gao, and D. Natelson, "Doping-dependent charge injection and band alignment in organic field-effect transistors", Phys. Rev. B. 72, 235302 (2005).

  • D. Natelson, L.H. Yu, J. W. Ciszek, Z.K. Keane, and J.M. Tour, "Single-molecule transistors: electron transfer in the solid state", Chemical Physics 324, 267-275 (2006).

  • S. Kirchner, L. Zhu, Q.M. Si, and D. Natelson, "Quantum criticality in ferromagnetic single-electron transistors", PNAS 102, 18824-18829 (2005).

  • L.H. Yu, Z.K. Keane, J.W. Ciszek, L. Cheng, J.M. Tour, T. Baruah, M.R. Pederson, and D. Natelson, "Strong Kondo physics and anomalous gate dependence in single-molecule transistors", Phys. Rev. Lett. 95, 256803 (2005). Supplementary material available here.

  • B.H. Hamadani and D. Natelson, "Extracting contact effects in organic field-effect transistors", Proc. IEEE 93, 1306-1311 (2005).

  • A. Trionfi, S. Lee, and D. Natelson, "Time-dependent universal conductance fluctuations and coherence in AuPd and Ag", Phys. Rev. B. 72, 035407 (2005).

  • B.H. Hamadani and D. Natelson, "Nonlinear charge injection in organic field-effect transistors", J. Appl. Phys. 97, 064508 (2005).

  • L.H. Yu, Z.K. Keane, J.W. Ciszek, L. Cheng, M.P. Stewart, J.M. Tour, and D. Natelson, "Inelastic electron tunneling via molecular vibrations in single-molecule transistors", Phys. Rev. Lett. 93, 266802 (2004).

  • S. Lee, A. Trionfi, and D. Natelson, "Quantum coherence in a ferromagnetic metal: time-dependent conductance fluctuations", Phys. Rev. B 70, 212407 (2004).

  • A. Trionfi, S. Lee, and D. Natelson, "Electronic coherence in metals: comparing weak localization and time-dependent conductance fluctuations", Phys. Rev. B 70, 041304(R) (2004).

  • L.H.Yu and D. Natelson, "Transport in single-molecule transistors: Kondo physics and negative differential resistance", Nanotechnology 15, S517-S524 (2004).

  • L.H. Yu and D. Natelson, "Kondo physics in C60 Single-Molecule Transistors", Nano Letters 4, 79-83 (2004).

  • B.H. Hamadani and D. Natelson, "Temperature-dependent contact resistances in high quality polymer field-effect transistors", Appl. Phys. Lett. 84, 443-445 (2004).

  • B.H. Hamadani and D. Natelson, "Gated nonlinear transport in polymer field effect transistors", J. Appl. Phys. 95, 1227-1232 (2004).

  • L.H. Yu and D. Natelson, "Density of states and magnetoconductance of disordered Au point contacts, Phys. Rev. B 68, 113407 (2003).

  • L.H. Yu and D. Natelson, "Zero bias anomalies in electrochemically fabricated nanojunctions, Appl. Phys. Lett. 82, 2332-2334 (2003).

  • D. Natelson, "Fabrication of metal nanowires", (invited book chapter), in Recent Research Developments in Vacuum Science and Technology 4, J. Dabrowski, ed., Research Signpost, Kerala, India (2003).

  • D. Natelson, R.L. Willett, L.N. Pfeiffer, K.W. West, "Geometry-dependent dephasing in small metallic wires", Phys. Rev. Lett. 86, 1821-1824 (2001)

  • D. Natelson, R.L. Willett, L.N. Pfeiffer, K.W. West, "Molecular-scale metal wires", Sol. State Comm. 115, 269-273 (2000).

  • D. Natelson, R.L. Willett, L.N. Pfeiffer, K.W. West, "Fabrication of extremely narrow metal wires", Appl. Phys. Lett., 77, 1991-1993 (2000).